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1

ESD effects in power MOSFETs: a review

Dragan Zupac, Ronald D. Schrimpf, Kenneth F. Galloway

Journal:

Microelectronics Journal

Année:

1993

Langue:

english

Fichier:

PDF, 1.06 MB

english, 1993

2

Total ionizing dose effects in shallow trench isolation oxides

Federico Faccio, Hugh J. Barnaby, Xiao J. Chen, Daniel M. Fleetwood, Laura Gonella, Michael McLain, Ronald D. Schrimpf

Journal:

Microelectronics Reliability

Année:

2008

Langue:

english

Fichier:

PDF, 281 KB

english, 2008

3

A generalized model for the lifetime of microelectronic components, applied to storage conditions

Loren J Wise, Ronald D Schrimpf, Harold G Parks, Kenneth F Galloway

Journal:

Microelectronics Reliability

Année:

2001

Langue:

english

Fichier:

PDF, 227 KB

english, 2001

4

Muon-Induced Single Event Upsets in Deep-Submicron Technology

Sierawski, Brian D., Mendenhall, Marcus H., Reed, Robert A., Clemens, Michael A., Weller, Robert A., Schrimpf, Ronald D., Blackmore, Ewart W., Trinczek, Michael, Hitti, Bassam, Pellish, Jonathan A., B

Journal:

IEEE Transactions on Nuclear Science

Année:

2010

Langue:

english

Fichier:

PDF, 551 KB

english, 2010

5

[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Neutron and alpha particle-induced transients in 90 nm technology

Narasimham, Balaji, Gadlage, Matthew J., Bhuva, Bharat L., Schrimpf, Ronald D., Massengill, Lloyd W., Holman, W. Timothy, Witulski, Arthur F., Xiaowei Zhu,, Balasubramanian, Anupama, Wender, Steve A.

Année:

2008

Langue:

english

Fichier:

PDF, 273 KB

english, 2008

6

Single-Event Transient Measurements in nMOS and pMOS Transistors in a 65-nm Bulk CMOS Technology at Elevated Temperatures

Gadlage, Matthew J., Ahlbin, Jonathan R., Narasimham, Balaji, Bhuva, Bharat L., Massengill, Lloyd W., Schrimpf, Ronald D.

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2011

Langue:

english

Fichier:

PDF, 991 KB

english, 2011

7

The sensitivity of radiation-induced leakage to STI topology and sidewall doping

Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf, Sarah Kalemeris, Lloyd W. Massengill, John Sochacki, Hugh J. Barnaby

Journal:

Microelectronics Reliability

Année:

2011

Langue:

english

Fichier:

PDF, 1.10 MB

english, 2011

8

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions

Tania Roy, Yevgeniy S. Puzyrev, En Xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, James S. Speck, Sokrates T. Pantelides

Journal:

Microelectronics Reliability

Année:

2011

Langue:

english

Fichier:

PDF, 676 KB

english, 2011

9

Monte Carlo Simulation of Single Event Effects

Weller, Robert A., Mendenhall, Marcus H., Reed, Robert A., Schrimpf, Ronald D., Warren, Kevin M., Sierawski, Brian D., Massengill, Lloyd W.

Journal:

IEEE Transactions on Nuclear Science

Année:

2010

Langue:

english

Fichier:

PDF, 851 KB

english, 2010

10

Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

Narasimham, Balaji, Bhuva, Bharat L., Schrimpf, Ronald D., Massengill, Lloyd W., Gadlage, Matthew J., Amusan, Oluwole A., Holman, William Timothy, Witulski, Arthur F., Robinson, William H., Black, Jef

Journal:

IEEE Transactions on Nuclear Science

Année:

2007

Langue:

english

Fichier:

PDF, 938 KB

english, 2007

11

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies

Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li

Journal:

Microelectronics Reliability

Année:

2012

Langue:

english

Fichier:

PDF, 1.22 MB

english, 2012

12

Contribution of Control Logic Upsets and Multi-Node Charge Collection to Flip-Flop SEU Cross-Section in 40-nm CMOS

Narasimham, Balaji, Wang, Jung K., Buer, Myron, Gorti, Ramamurthy, Chandrasekharan, Karthik, Warren, Kevin M., Sierawski, Brian D., Schrimpf, Ronald D., Reed, Robert A., Weller, Robert A.

Journal:

IEEE Transactions on Nuclear Science

Année:

2010

Langue:

english

Fichier:

PDF, 1.18 MB

english, 2010

13

[IEEE 2010 IEEE International SOI Conference - San Diego, CA, USA (2010.10.11-2010.10.14)] 2010 IEEE International SOI Conference (SOI) - Total-ionizing-dose radiation response of partially-depleted SOI devices

Rezzak, Nadia, Zhang, En Xia, Alles, Michael L., Schrimpf, Ronald D., Hughes, Harold

Année:

2010

Langue:

english

Fichier:

PDF, 1.09 MB

english, 2010

14

ELDRS in Bipolar Linear Circuits: A Review

Pease, Ronald L., Schrimpf, Ronald D., Fleetwood, Daniel M.

Journal:

IEEE Transactions on Nuclear Science

Année:

2009

Langue:

english

Fichier:

PDF, 1.33 MB

english, 2009

15

Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

Samsel, Isaak K., Zhang, En Xia, Hooten, Nicholas C., Funkhouser, Erik D., Bennett, William G., Reed, Robert A., Schrimpf, Ronald D., McCurdy, Michael W., Fleetwood, Daniel M., Weller, Robert A., Vizk

Journal:

IEEE Transactions on Nuclear Science

Année:

2013

Langue:

english

Fichier:

PDF, 1.11 MB

english, 2013

16

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Puzyrev, Yevgeniy, Mukherjee, Shubhajit, Jin Chen,, Roy, Tania, Silvestri, Marco, Schrimpf, Ronald D., Fleetwood, Daniel M., Singh, Jasprit, Hinckley, John M., Paccagnella, Alessandro, Pantelides, So

Journal:

IEEE Transactions on Electron Devices

Année:

2014

Langue:

english

Fichier:

PDF, 979 KB

english, 2014

17

An efficient technique to select logic nodes for single event transient pulse-width reduction

Mahatme, Nihaar N., Chatterjee, Indranil, Patki, Akash, Limbrick, Daniel B., Bhuva, Bharat L., Schrimpf, Ronald D., Robinson, William

Journal:

Microelectronics Reliability

Année:

2013

Langue:

english

Fichier:

PDF, 307 KB

english, 2013

18

Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems

Fleetwood, Zachary E., Kenyon, Eleazar W., Lourenco, Nelson E., Jain, Shaleen, Zhang, En Xia, England, Troy D., Cressler, John D., Schrimpf, Ronald D., Fleetwood, Daniel M.

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2014

Langue:

english

Fichier:

PDF, 1.36 MB

english, 2014

19

[IEEE 2007 IEEE International Conference on Integrated Circuit Design and Technology - Austin, TX, USA (2007.05.30-2007.06.1)] 2007 IEEE International Conference on Integrated Circuit Design and Technology - Soft Error Considerations for Multicore Microprocessor Design

Robinson, William H., Alles, Michael L., Bapty, Theodore A., Bhuva, Bharat L., Black, Jeffrey D., Bonds, Alfred B., Massengill, Lloyd W., Neema, Sandeep K., Schrimpf, Ronald D., Scott, Jason M.

Année:

2007

Langue:

english

Fichier:

PDF, 1.62 MB

english, 2007

20

[IEEE 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Sevilla, Spain (2011.09.19-2011.09.23)] 2011 12th European Conference on Radiation and Its Effects on Components and Systems - Radiation-induced oxide charge in low- and high-H2 environments

Rowsey, Nicole L., Law, Mark E., Schrimpf, Ronald D., Fleetwood, Daniel M., Tuttle, Blair R., Pantelides, Sokrates T.

Année:

2011

Langue:

english

Fichier:

PDF, 406 KB

english, 2011

21

Total-ionizing-dose effects and reliability of carbon nanotube FET devices

Zhang, Cher Xuan, Zhang, En Xia, Fleetwood, Daniel M., Alles, Michael L., Schrimpf, Ronald D., Rutherglen, Chris, Galatsis, Kosmas

Journal:

Microelectronics Reliability

Année:

2014

Langue:

english

Fichier:

PDF, 692 KB

english, 2014

22

Increased Rate of Multiple-Bit Upset From Neutrons at Large Angles of Incidence

Tipton, Alan D., Zhu, Xiaowei, Weng, Haixiao, Pellish, Jonathan A., Fleming, Patrick R., Schrimpf, Ronald D., Reed, Robert A., Weller, Robert A., Mendenhall, Marcus

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2008

Langue:

english

Fichier:

PDF, 319 KB

english, 2008

23

Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies

Pellish, Jonathan A., Reed, Robert A., Schrimpf, Ronald D., Alles, Michael L., Varadharajaperumal, Muthubalan, Niu, Guofu, Sutton, Akil K., Diestelhorst, Ryan M., Espinel, Gustavo, Krithivasan, Ramkum

Journal:

IEEE Transactions on Nuclear Science

Année:

2006

Langue:

english

Fichier:

PDF, 706 KB

english, 2006

24

[IEEE 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Brugge, Belgium (2009.09.14-2009.09.18)] 2009 European Conference on Radiation and Its Effects on Components and Systems - Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs

Arora, Rajan, Mitard, Jerome, Madan, Anuj, Simoen, Eddy, Zhang, Enxia X., Fleetwood, Daniel M., Choi, Bo K., Schrimpf, Ronald D., Galloway, Kenneth F., Kulkarni, Shrinivas R., Meuris, Marc, Claeys, Co

Année:

2009

Langue:

english

Fichier:

PDF, 2.33 MB

english, 2009

25

The Effects of Angle of Incidence and Temperature on Latchup in 65 nm Technology

Hutson, John M., Pellish, Jonathan D., Boselli, Gianluca, Baumann, Robert, Reed, Robert A., Schrimpf, Ronald D., Weller, Robert A., Massengill, Lloyd W.

Journal:

IEEE Transactions on Nuclear Science

Année:

2007

Langue:

english

Fichier:

PDF, 890 KB

english, 2007

26

Evaluation of ELDRS Mechanisms Using Dose Rate Switching Experiments on Gated Lateral PNP Transistors

Gonzalez-Velo, Yago, Boch, Jérôme, Saigne, Frédéric, Roche, Nicolas J.-H., Perez, Stephanie, Vaille, Jean-Roch, Deneau, Christelle, Dusseau, Laurent, Lorfevre, Eric, Schrimpf, Ronald D., Chatry, Chris

Journal:

IEEE Transactions on Nuclear Science

Année:

2011

Langue:

english

Fichier:

PDF, 952 KB

english, 2011

27

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Including the effects of process-related variability on radiation response using a new test chip

Li, Yanfeng, Rezzak, Nadia, Schrimpf, Ronald D., Fleetwood, Daniel M., Zhang, Enxia, Wu, Yanjun, Cai, Shuang, Wang, Jingqiu, Wang, Donglin

Année:

2010

Langue:

english

Fichier:

PDF, 415 KB

english, 2010

28

Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits

Li, Yanfeng, Rezzak, Nadia, Zhang, En Xia, Schrimpf, Ronald D., Fleetwood, Daniel M., Wang, Jingqiu, Wang, Donglin, Wu, Yanjun, Cai, Shuang

Journal:

IEEE Transactions on Nuclear Science

Année:

2010

Langue:

english

Fichier:

PDF, 587 KB

english, 2010

29

Dynamic Modeling of Radiation-Induced State Changes in ${\hbox {HfO}_2}/\hbox {Hf}$ 1T1R RRAM

Bennett, William G., Hooten, Nicholas C., Schrimpf, Ronald D., Reed, Robert A., Alles, Michael L., Zhang, En Xia, Weeden-Wright, Stephanie L., Linten, Dimitri, Jurczak, Malgorzata, Fantini, Andrea

Journal:

IEEE Transactions on Nuclear Science

Année:

2014

Langue:

english

Fichier:

PDF, 1015 KB

english, 2014

30

Hot-Carrier Degradation in GaN HEMTs Due to Substitutional Iron and Its Complexes

Mukherjee, Shubhajit, Puzyrev, Yevgeniy, Chen, Jin, Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T.

Journal:

IEEE Transactions on Electron Devices

Année:

2016

Langue:

english

Fichier:

PDF, 2.52 MB

english, 2016

31

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Javanainen, Arto, Galloway, Kenneth F., Ferlet-Cavrois, Veronique, Lauenstein, Jean-Marie, Pintacuda, Francesco, Schrimpf, Ronald D., Reed, Robert A., Virtanen, A.

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2016

Langue:

english

Fichier:

PDF, 1.17 MB

english, 2016

32

Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

Zhang, En Xia, Fleetwood, Daniel M., Hachtel, Jordan A., Liang, Chundong, Reed, Robert A., Alles, Michael L., Schrimpf, Ronald D., Linten, Dimitri, Mitard, Jerome, Chisholm, Matthew F., Pantelides, So

Journal:

IEEE Transactions on Nuclear Science

Année:

2017

Langue:

english

Fichier:

PDF, 583 KB

english, 2017

33

The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs)

Arutt, Charles N, Alles, Michael L, Liao, Wenjun, Gong, Huiqi, Davidson, Jim L, Schrimpf, Ronald D, Reed, Robert A, Weller, Robert A, Bolotin, Kirill, Nicholl, Ryan, Pham, Thang Toan, Zettl, Alex, Qin

Journal:

Semiconductor Science and Technology

Année:

2017

Langue:

english

Fichier:

PDF, 2.10 MB

english, 2017

34

Radiation Response and Adaptive Control-Based Degradation Mitigation of MEMS Accelerometers in Ionizing Dose Environments

Pitt, E. Bryn, Barth, Eric J., Diggins, Zachary J., Mahadevan, Nagabhushan, Karsai, Gabor, Sierawski, Brian D., Reed, Robert A., Schrimpf, Ronald D., Weller, Robert A., Alles, Michael L., Witulski, Ar

Journal:

IEEE Sensors Journal

Année:

2017

Langue:

english

Fichier:

PDF, 2.75 MB

english, 2017

35

Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs

Jiang, Rong, Zhang, En Xia, McCurdy, Michael W., Chen, Jin, Shen, Xiao, Wang, Pan, Fleetwood, Daniel M., Schrimpf, Ronald D., Kaun, Stephen W., Kyle, Erin C. H., Speck, James S., Pantelides, Sokrates

Journal:

IEEE Transactions on Nuclear Science

Année:

2017

Langue:

english

Fichier:

PDF, 1.50 MB

english, 2017

36

Influence of LDD spacers and H+ transport on the total-ionizing-dose response of 65 nm MOSFETs irradiated to ultra-high doses

Faccio, Federico, Borghello, Giulio, Lerario, Edoardo, Fleetwood, Daniel M., Schrimpf, Ronald D., Gong, Huiqi, Zhang, En Xia, Wang, P., Michelis, Stefano, Gerardin, Simone, Paccagnella, Alessandro, Bo

Journal:

IEEE Transactions on Nuclear Science

Année:

2017

Langue:

english

Fichier:

PDF, 3.69 MB

english, 2017

37

Analysis of TPA Pulsed-Laser-Induced Single-Event Latchup Sensitive-Area

Wang, Peng, Sternberg, Andrew L., Kozub, John A., Zhang, En Xia, Dodds, Nathaniel A., Jordan, Scott L., Fleetwood, Daniel M., Reed, Robert A., Schrimpf, Ronald D.

Journal:

IEEE Transactions on Nuclear Science

Année:

2018

Langue:

english

Fichier:

PDF, 1.37 MB

english, 2018

38

Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs

Jiang, Rong, Shen, Xiao, Fang, Jingtian, Wang, Pan, Zhang, En Xia, Chen, Jin, Fleetwood, Daniel M., Schrimpf, Ronald D., Kaun, Stephen W., Kyle, Erin C. H., Speck, James S., Pan-telides, Sokrates T.

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2018

Langue:

english

Fichier:

PDF, 2.27 MB

english, 2018

39

Single-Event Burnout Mechanisms in SiC Power MOSFETs

Witulski, Arthur F., Ball, Dennis R., Galloway, Kenneth F., Javanainen, Arto, Javanainen, Arto, Lauenstein, Jean-Marie, Sternberg, Andrew L., Schrimpf, Ronald D.

Journal:

IEEE Transactions on Nuclear Science

Année:

2018

Langue:

english

Fichier:

PDF, 1.33 MB

english, 2018

40

Failure Estimates for SiC Power MOSFETs in Space Electronics

Galloway, Kenneth, Witulski, Arthur, Schrimpf, Ronald, Sternberg, Andrew, Ball, Dennis, Javanainen, Arto, Reed, Robert, Sierawski, Brian, Lauenstein, Jean-Marie

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 813 KB

english, 2018

41

Understanding the Average Electron-Hole-Pair Creation-Energy in Silicon and Germanium based on Full-band Monte Carlo Simulations

Fang, Jingtian, Reaz, Mahmud, Weeden-Wright, Stephanie L., Schrimpf, Ronald D., Reed, Robert A., Weller, Robert A., Fischetti, Massimo V., Pantelides, Sokrates T.

Journal:

IEEE Transactions on Nuclear Science

Année:

2018

Langue:

english

Fichier:

PDF, 5.90 MB

english, 2018

42

Total-Ionizing-Dose Effects on InGaAs FinFETs with Modified Gate Stack

Zhao, Simeng E., Paccagnella, Alessandro, Schrimpf, Ronald D., Reed, Robert A., Fleetwood, Daniel M., Bonaldo, Stefano, Wang, Pengfei, Zhang, En Xia, Waldron, Niamh, Collaert, Nadine, Putcha, Vamsi, L

Journal:

IEEE Transactions on Nuclear Science

Année:

2019

Fichier:

PDF, 2.12 MB

2019

43

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO 2 /HfO 2 Gate Dielectrics

Gorchichko, Mariia, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Linten, Dimitri, Cao, Yanrong, Zhang, En Xia, Yan, Dawei, Gong, Huiqi, Zhao, Simeng E., Wang, Pan, Jiang, Rong, Liang, C

Journal:

IEEE Transactions on Nuclear Science

Année:

2020

Fichier:

PDF, 3.96 MB

2020

44

[IEEE 2020 Annual Reliability and Maintainability Symposium (RAMS) - Palm Springs, CA, USA (2020.1.27-2020.1.30)] 2020 Annual Reliability and Maintainability Symposium (RAMS) - Automatic Fault Tree Generation from Radiation-Induced Fault Models

Austin, Rebekah A., Mahadevan, Nagabhushan, Witulski, Arthur F., Karsai, Gabor, Sierawski, Brian D., Schrimpf, Ronald D., Reed, Robert A.

Année:

2020

Fichier:

PDF, 388 KB

2020

45

Interpretation of experimentally observed C-t responses for copper contaminated devices

Lichyn Lee, Harold G Parks, Ronald D Schrimpf

Journal:

Solid-State Electronics

Année:

1996

Langue:

english

Fichier:

PDF, 568 KB

english, 1996

46

Engineering model of a biased metal–molecule–metal junction

Matthieu Caussanel, Ronald D. Schrimpf, Leonidas Tsetseris, Matthew H. Evans, Sokrates T. Pantelides

Journal:

Journal of Computational Electronics

Année:

2007

Langue:

english

Fichier:

PDF, 307 KB

english, 2007

47

Physical mechanisms of single-event effects in advanced microelectronics

Ronald D. Schrimpf, Robert A. Weller, Marcus H. Mendenhall, Robert A. Reed, Lloyd W. Massengill

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2007

Langue:

english

Fichier:

PDF, 324 KB

english, 2007

48

Applications of heavy ion microprobe for single event effects analysis

Robert A. Reed, Gyorgy Vizkelethy, Jonathan A. Pellish, Brian Sierawski, Kevin M. Warren, Mark Porter, Jeff Wilkinson, Paul W. Marshall, Guofu Niu, John D. Cressler, Ronald D. Schrimpf, Alan Tipton, R

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2007

Langue:

english

Fichier:

PDF, 300 KB

english, 2007

49

Evidence of Radiation-Induced Dopant Neutralization in Partially-Depleted SOI NMOSFETs

Akarvardar, Kerem, Schrimpf, Ronald D., Fleetwood, Daniel M., Cristoloveanu, Sorin, Gentil, Pierre, Blalock, Benjamin J.

Journal:

IEEE Transactions on Nuclear Science

Année:

2007

Langue:

english

Fichier:

PDF, 577 KB

english, 2007

50

Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation

Song, Jae-Joon, Choi, Bo Kyoung, Zhang, En Xia, Schrimpf, Ronald D., Fleetwood, Daniel M., Park, Chan-Hoon, Jeong, Yoon-Ha, Kim, Ohyun

Journal:

IEEE Transactions on Nuclear Science

Année:

2011

Langue:

english

Fichier:

PDF, 829 KB

english, 2011